Effect of annealing on ZnO thin films grown on (001) silicon substrate by low-pressure metalorganic chemical vapour depositionYUANTAO ZHANG; GUOTONG DU; XIAOTIAN YANG et al.Semiconductor science and technology. 2004, Vol 19, Num 6, pp 755-758, issn 0268-1242, 4 p.Article

Electrical, optical and structural properties of Li-doped SnO₂ transparent conducting films deposited by the spray pyrolysis technique: a carrier-type conversion studyBAGHERI-MOHAGHEGHI, Mohammad-Mehdi; SHOKOOH-SAREMI, Mehrdad.Semiconductor science and technology. 2004, Vol 19, Num 6, pp 764-769, issn 0268-1242, 6 p.Article

Structural and electrical properties of nitrogen and aluminum codoped p-type ZnO filmsCANYUN ZHANG; XIAOMIN LI; JIMING BIAN et al.Solid state communications. 2004, Vol 132, Num 2, pp 75-78, issn 0038-1098, 4 p.Article

Colossal electroresistance of a Pr_0.7Ca_0.3MnO₃ thin film at room temperatureODAGAWA, A; SATO, H; INOUE, I. H et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 22, pp 224403.1-224403.4, issn 1098-0121Article

Pulsed laser deposition of amorphous carbon nitride thin films and their electrical propertiesAOI, Y; SAKURADA, K; KAMIJO, E et al.Applied physics. A, Materials science & processing (Print). 2004, Vol 79, Num 4-6, pp 1533-1536, issn 0947-8396, 4 p.Conference Paper

Crystal structure and electrical parameters of In-doped PbTe/Si films prepared by modified HWE techniqueSAMOYLOV, A. M; KHOVIV, A. M; BUCHNEV, S. A et al.Journal of crystal growth. 2003, Vol 254, Num 1-2, pp 55-64, issn 0022-0248, 10 p.Article

DC conduction processes and electrical parameters of the organic semiconducting zinc phthalocyanine, ZnPc, thin filmsSALEH, A. M; HASSAN, A. K; GOULD, R. D et al.The Journal of physics and chemistry of solids. 2003, Vol 64, Num 8, pp 1297-1303, issn 0022-3697, 7 p.Article

Electrical and optical properties of reactive DC magnetron sputtered silver oxide thin films: role of oxygenULLASH KUMAR BARIK; SRINIVASAN, S; NAGENDRA, C. L et al.Thin solid films. 2003, Vol 429, Num 1-2, pp 129-134, issn 0040-6090, 6 p.Article

Field and temperature-dependent electronic transport parameters of amorphous and polycrystalline GaSe thin filmsTHAMILSELVAN, M; PREMNAZEER, K; MANGALARAJ, D et al.Physica. B, Condensed matter. 2003, Vol 337, Num 1-4, pp 404-412, issn 0921-4526, 9 p.Article

Growth and characterization of semiconducting cadmium selenide thin filmsSHREEKANTHAN, K. N; RAJENDRA, B. V; KASTURI, V. B et al.Crystal research and technology (1979). 2003, Vol 38, Num 1, pp 30-33, issn 0232-1300, 4 p.Article

Preparation and characteristics of p-type ZnO films by DC reactive magnetron sputteringYE, Zhi-Zhen; LU, Jian-Guo; CHEN, Han-Hong et al.Journal of crystal growth. 2003, Vol 253, Num 1-4, pp 258-264, issn 0022-0248, 7 p.Article

Si accumulation at the surface upon re-evaporation of Si-doped GaAs(100)REUTER, D; SCHAFMEISTER, P; KAILUWEIT, P et al.Semiconductor science and technology. 2003, Vol 18, Num 2, pp 115-117, issn 0268-1242, 3 p.Article

The metal-organic CVD of lanthanunm nickelate electrodes for use in ferroelectric devicesLANE, Penelope A; CROSBIE, Michael J; WRIGHT, Peter J et al.Chemical vapor deposition (Print). 2003, Vol 9, Num 2, pp 87-92, issn 0948-1907, 6 p.Article

Uniformity of 4H-SiC epitaxial layers grown on 3-in diameter substratesNISHIO, Johji; HASEGAWA, Mitsuru; KOJIMA, Kazutoshi et al.Journal of crystal growth. 2003, Vol 258, Num 1-2, pp 113-122, issn 0022-0248, 10 p.Article

p-Type ZnO thin films prepared by oxidation of Zn₃N₂ thin films deposited by DC magnetron sputteringCHAO WANG; ZHENGUO JI; KUN LIU et al.Journal of crystal growth. 2003, Vol 259, Num 3, pp 279-281, issn 0022-0248, 3 p.Article

Electrophysical properties of thin germanium/carbon layers produced on silicon using organometallic radio frequency plasma enhanced chemical vapor deposition processSZMIDT, J; GAZICKI-LIPMAN, M; SZYMANOWSKI, H et al.Thin solid films. 2003, Vol 441, Num 1-2, pp 192-199, issn 0040-6090, 8 p.Article

Correlation of vapor pressure equation and film properties with trimethylindium purity for the MOVPE grown III-V compoundsSHENAI, Deo V; TIMMONS, Michael L; DICARLO, Ronald L et al.Journal of crystal growth. 2003, Vol 248, pp 91-98, issn 0022-0248, 8 p.Conference Paper

Carrier dynamics in CVD diamond: electron and hole contributionsTUVE, Cristina; BELLINI, V; VERONA-RINATI, G et al.Diamond and related materials. 2003, Vol 12, Num 3-7, pp 499-502, issn 0925-9635, 4 p.Conference Paper

Cd-doping effects on the properties of polycrystalline α-In₂Se₃ thin filmsQASRAWI, A. F.Crystal research and technology (1979). 2002, Vol 37, Num 4, pp 378-390, issn 0232-1300Article

CoS thin films prepared with modified chemical bath depositionZHENRUI YU; JINHUI DU; SHUHUA GUO et al.Thin solid films. 2002, Vol 415, Num 1-2, pp 173-176, issn 0040-6090Article

On the electrical conductivity of thermally evaporated CdS thin filmsSAHAY, P. P; JHA, S; SHAMSUDDIN, M et al.Journal of materials science letters. 2002, Vol 21, Num 12, pp 923-925, issn 0261-8028Article

Electrical and optical properties of SnO₂:Sb films prepared on polyimide substrate by r.f. bias sputteringXIAOTAO HAO; JIN MA; DEHENG ZHANG et al.Applied surface science. 2002, Vol 189, Num 1-2, pp 157-161, issn 0169-4332Article

Electrical conductivity relaxation studies of an epitaxial La_0.5Sr_0.5CoO_3-δ thin filmCHEN, X; WANG, S; YANG, Y. L et al.Solid state ionics. 2002, Vol 146, Num 3-4, pp 405-413, issn 0167-2738Article

Electrical properties of epitaxial La_0.5Sr_0.5CoO₃ (LSCO) thin films prepared in low oxygen pressureWAKIYA, Naoki; SHINOZAKI, Kazuo; MIZUTANI, Nobuyasu et al.Nippon seramikkusu kyokai gakujutsu ronbunshi. 2002, Vol 110, Num 5, pp 353-357, issn 0914-5400Article

Growth and characterization of Pb_1-x(Mg_1-ySr_y)_xS thin films prepared by hot-wall epitaxyABE, S; MASUMOTO, K.Journal of crystal growth. 2002, Vol 246, Num 1-2, pp 121-126, issn 0022-0248Article